Distributed electron cyclotron resonance in silicon processing: Epitaxy and etching
| Autor: | L. Vallier, Jacques Pelletier, Claude Pomot, Rudolf R. Burke |
|---|---|
| Přispěvatelé: | Laboratoire des technologies de la microélectronique ( LTM ), Université Joseph Fourier - Grenoble 1 ( UJF ) -Centre National de la Recherche Scientifique ( CNRS ), Laboratoire des technologies de la microélectronique (LTM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), Clot, Marielle, Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 1990 |
| Předmět: |
010302 applied physics
Silicon Analytical chemistry chemistry.chemical_element 02 engineering and technology Surfaces and Interfaces Substrate (electronics) Plasma 021001 nanoscience & nanotechnology Condensed Matter Physics 7. Clean energy 01 natural sciences Electron cyclotron resonance Surfaces Coatings and Films Ion chemistry Physics::Plasma Physics Etching (microfabrication) Electric field 0103 physical sciences Atomic physics 0210 nano-technology Excitation ComputingMilieux_MISCELLANEOUS |
| Zdroj: | J. Vac. Sci. Technol J. Vac. Sci. Technol, 1990, A8(3), pp.2931 Journal of Vacuum Science and Technology Journal of Vacuum Science and Technology, 1990, A8(3), pp.2931 |
| ISSN: | 0022-5355 |
| Popis: | The microwave multipolar plasma (MMP) is confined by a multipolar magnetic field and excited by a 2.45 GHz microwave electric field. The distributed electron cyclotron resonance (DECR) excitation uses the confinement magnets to obtain the resonant magnetic field necessary for ECR excitation. The major MMP asset for surface treatment is a substantial ion flux under controlled and low energy (down to a few eV). Unlike conventional ECR, the DECR ion flux onto the substrate is homogeneous and not influenced by magnetic fields. Silicon homoepitaxy by SiH4 DECR is achieved in the 400–800 °C range. The substrate is cleaned by an H2 or Ar plasma before deposition. Control of the ion energy during cleaning and deposition is paramount. Above 600 °C the defect density drops from 1010 to 105 cm−2. N‐type As doped layers are obtained by adding AsH3 to the plasma. The growth rate is almost independent of temperature and doping level. Abrupt As profiles are obtained when the ion impact energy is adjusted to 50 eV. Recen... |
| Databáze: | OpenAIRE |
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