The influence of oxide/nitride surface layers on diffusion in Si and SiGe

Autor:	Jacques Chevallier, A. Nylandsted Larsen, N. Zangenberg, J. L. Hansen
Rok vydání:	2005
Předmět:	Materials science Silicon Analytical chemistry Oxide Mineralogy chemistry.chemical_element Germanium General Chemistry Nitride Crystallographic defect chemistry.chemical_compound chemistry General Materials Science Diffusion (business) Boron Molecular beam epitaxy
Zdroj:	Zangenberg, N R, Chevallier, J, Hansen, J L & Larsen, A N 2004, ' The influence of oxide/nitride surface layers on diffusion in Si and SiGe ', Appl. Phys. A, vol. DOI:10.1007, pp. 00339-004-2958-6 .
ISSN:	1432-0630 0947-8396
DOI:	10.1007/s00339-004-2958-6
Popis:	The effect of surface capping on the super- and undersaturation of point defects in Si has been investigated by the diffusion of deep (400 nm) and shallow (200 nm) high concentration profiles of boron grown by molecular beam epitaxy (MBE). Additional information is extracted from the self-diffusion of Ge in the Si-like Si0.50Ge0.50-matrix. The objective is to investigate the injection of vacancies and interstitials from surface or bulk with the aim of obtaining inert diffusion conditions .
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::773b7c2e179f1164d9c561153d4de338 https://doi.org/10.1007/s00339-004-2958-6 Zobrazit plný text záznamu Plný text ve formátu PDF