Local electric field screening in bi-layer graphene devices
| Autor: | Arseniy Lartsev, Vishal Panchal, Olga Kazakova, Cristina E. Giusca, Rositza Yakimova |
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| Jazyk: | angličtina |
| Rok vydání: | 2014 |
| Předmět: |
Materials science
Bar (music) Materials Science (miscellaneous) scanning gate microscopy Biophysics General Physics and Astronomy Scanning gate microscopy Nanotechnology law.invention Charge-carrier density law Physical and Theoretical Chemistry Mathematical Physics single-layer graphene business.industry Graphene Electric-field screening Physics Bi layer double-layer graphene epitaxial graphene lcsh:QC1-999 electrical gating Optoelectronics Epitaxial graphene business Graphene nanoribbons lcsh:Physics |
| Zdroj: | Frontiers in Physics, Vol 2 (2014) |
| Popis: | We present experimental studies of both local and macroscopic electrical effects in uniform single- (1LG) and bi-layer graphene (2LG) devices as well as in devices with non-uniform graphene coverage, under ambient conditions. DC transport measurements on sub-micron scale Hall bar devices were used to show a linear rise in carrier density with increasing amounts of 2LG coverage. Electrical scanning gate microscopy was used to locally top gate uniform and non-uniform devices in order to observe the effect of local electrical gating. We experimentally show a significant level of electric field screening by 2LG. We demonstrate that SGM technique is an extremely useful research tool for studies of local screening effects, which provides a complementary view on phenomena that are usually considered only within a macroscopic experimental scheme. |
| Databáze: | OpenAIRE |
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