Determination Of Surface Recombination Velocity And Bulk Lifetime In Detector Grade Silicon And Germanium Crystals
| Autor: | J. T. Walton, C.S. Rossington, Paul N. Luke, N. Derhacobian, P. Fine, Y. K. Wong |
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| Rok vydání: | 2005 |
| Předmět: |
Nuclear and High Energy Physics
Materials science Silicon business.industry Photoconductivity Analytical chemistry chemistry.chemical_element Germanium Carrier lifetime Particle detector Semiconductor detector Nuclear Energy and Engineering chemistry otorhinolaryngologic diseases Optoelectronics Spontaneous emission Charge carrier sense organs Electrical and Electronic Engineering business |
| Zdroj: | 1993 IEEE Conference Record Nuclear Science Symposium and Medical Imaging Conference. |
| DOI: | 10.1109/nssmic.1993.701697 |
| Popis: | The utility of a noncontact photoconductive decay (PCD) technique is demonstrated in measuring the bulk lifetime, /spl tau//sub B/, and surface recombination velocity, S, in detector grade silicon and germanium crystals. We show that the simple analytical equations which relate the observed effective lifetimes in PCD transients to /spl tau//sub B/ and S have a limited range of applicability. The noncontact PCD technique is used to determine the effect of several surface treatments on the observed effective lifetimes in Si and Ge. A degradation of the effective lifetime in Si is reported as a result of the growth of a thin layer of native oxide at room temperature under atmospheric conditions. > |
| Databáze: | OpenAIRE |
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