Laser restructuring and photoluminescence of glass-clad GaSb/Si-core optical fibres
Autor: | Michael Fokine, John Ballato, Kristin Lønsethagen, Seunghan Song, Fredrik Laurell, Thomas Hawkins, Ursula J. Gibson |
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Jazyk: | angličtina |
Rok vydání: | 2019 |
Předmět: |
0301 basic medicine
Materials science Optical fiber Fabrication Photoluminescence Silicon Science General Physics and Astronomy chemistry.chemical_element 02 engineering and technology Characterization and analytical techniques General Biochemistry Genetics and Molecular Biology Article law.invention 03 medical and health sciences law Optical materials and structures lcsh:Science Semiconductor lasers Multidisciplinary business.industry General Chemistry 021001 nanoscience & nanotechnology Laser Core (optical fiber) 030104 developmental biology Semiconductor chemistry Optoelectronics lcsh:Q Photonics 0210 nano-technology business Materials for optics |
Zdroj: | Nature Communications, Vol 10, Iss 1, Pp 1-7 (2019) Nature Communications |
Popis: | Semiconductor-core optical fibres have potential applications in photonics and optoelectronics due to large nonlinear optical coefficients and an extended transparency window. Laser processing can impose large temperature gradients, an ability that has been used to improve the uniformity of unary fibre cores, and to inscribe compositional variations in alloy systems. Interest in an integrated light-emitting element suggests a move from Group IV to III-V materials, or a core that contains both. This paper describes the fabrication of GaSb/Si core fibres, and a subsequent CO2 laser treatment that aggregates large regions of GaSb without suppressing room temperature photoluminescence. The ability to isolate a large III-V crystalline region within the Si core is an important step towards embedding semiconductor light sources within infrared light-transmitting silicon optical fibre. Semiconductor-core optical fibres are of interest for their non-linear optical and electro-optical properties. Here, GaSb/Si composite-core optical fibres were fabricated and a CO2 laser was used to facilitate controlled GaSb segregation within the silicon. This has implications for embedding light sources in IR-transmitting fibers |
Databáze: | OpenAIRE |
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