Millimeter-Wave Amplifier-Based Noise Sources in SiGe BiCMOS Technology
| Autor: | Henrik Forsten, Jan Saijets, P. Piironen, Mikko Varonen, Mehmet Kaynak, Mikko Kantanen |
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| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Physics
Radiation business.industry SiGe Amplifier Electrical engineering Impedance matching Millimeter-wave 020206 networking & telecommunications 02 engineering and technology BiCMOS Condensed Matter Physics Noise (electronics) Silicon-germanium chemistry.chemical_compound chemistry Extremely high frequency noise sources 0202 electrical engineering electronic engineering information engineering Scattering parameters Electrical and Electronic Engineering Wideband business |
| Zdroj: | Forsten, H, Saijets, J H, Kantanen, M, Varonen, M, Kaynak, M & Piironen, P 2021, ' Millimeter-Wave Amplifier-Based Noise Sources in SiGe BiCMOS Technology ', IEEE Transactions on Microwave Theory and Techniques, vol. 69, no. 11, pp. 4689-4696 . https://doi.org/10.1109/TMTT.2021.3104028 |
| Popis: | This article describes the development and characterization of wideband millimeter-wave noise sources based on SiGe BiCMOS amplifiers. Two single-ended three-stage amplifier-based noise sources reached excess noise ratio (ENR) values over 20 dB from 120 to 220 GHz with 20 mA of the bias current from a 2.3-V supply. We also introduce a novel switchable noise source employing the Lange coupler for providing wideband matching in both ON and OFF configurations of the noise source. The Lange coupler-based noise source has better than 12-dB matching from 90 to 270 GHz with an ENR of better than 15 dB from 125 to 235 GHz. |
| Databáze: | OpenAIRE |
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