Interface states at semiconductor junctions
| Autor: | G Margaritondo |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
SURFACE
Interface (Java) Ab initio General Physics and Astronomy Electronic structure PROBE FORCE MICROSCOPY law.invention SYNCHROTRON-RADIATION SCALE LATERAL INHOMOGENEITIES law HETEROJUNCTION SCHOTTKY-BARRIER HEIGHT CONTACT-POTENTIAL-DIFFERENCE METAL GAAS Physics business.industry ELECTRON-EMISSION MICROSCOPY Schottky diode Heterojunction MICROGUN-PUMPED BLUE Engineering physics Synchrotron Semiconductor PHOTOVOLTAGE Optoelectronics BAND DISCONTINUITIES business INTERFACES |
| Zdroj: | Reports on Progress in Physics. 62:765-808 |
| ISSN: | 1361-6633 0034-4885 |
| DOI: | 10.1088/0034-4885/62/5/203 |
| Popis: | The experimental and theoretical progress in understanding the electronic structure and the related parameters of Schottky interfaces and heterojunctions is reviewed. Particular emphasis is devoted to the solution of several historical controversial points, to the impact of novel ab initio theoretical approaches, to new experimental techniques based on synchrotron light and free electron lasers, to the efforts towards controlled modifications of interface parameters and to the foreseeable future developments of this vigorously progressing and:technologically crucial field. |
| Databáze: | OpenAIRE |
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