The Study of Electrical Properties for Multilayer La2O3/Al2O3 Dielectric Stacks and LaAlO3 Dielectric Film Deposited by ALD
Autor: | Lu Zhao, Feng Xingyao, Hongxia Liu, He-Lei Liu, Xing Wang, Chenxi Fei |
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Rok vydání: | 2017 |
Předmět: |
Materials science
Annealing (metallurgy) 02 engineering and technology Dielectric Flat Band Voltage 01 natural sciences Capacitance LaAlO3 La2O3 Materials Science(all) Si substrate Stack (abstract data type) 0103 physical sciences lcsh:TA401-492 General Materials Science 010302 applied physics Nano Express business.industry Dangling bond Capacitance Property 021001 nanoscience & nanotechnology Condensed Matter Physics Trap density Optoelectronics lcsh:Materials of engineering and construction. Mechanics of materials Hafnium Oxide 0210 nano-technology business |
Zdroj: | Nanoscale Research Letters Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-4 (2017) |
ISSN: | 1556-276X 1931-7573 |
DOI: | 10.1186/s11671-017-2004-1 |
Popis: | The capacitance and leakage current properties of multilayer La2O3/Al2O3 dielectric stacks and LaAlO3 dielectric film are investigated in this paper. A clear promotion of capacitance properties is observed for multilayer La2O3/Al2O3 stacks after post-deposition annealing (PDA) at 800 °C compared with PDA at 600 °C, which indicated the recombination of defects and dangling bonds performs better at the high-k/Si substrate interface for a higher annealing temperature. For LaAlO3 dielectric film, compared with multilayer La2O3/Al2O3 dielectric stacks, a clear promotion of trapped charges density (N ot) and a degradation of interface trap density (D it) can be obtained simultaneously. In addition, a significant improvement about leakage current property is observed for LaAlO3 dielectric film compared with multilayer La2O3/Al2O3 stacks at the same annealing condition. We also noticed that a better breakdown behavior for multilayer La2O3/Al2O3 stack is achieved after annealing at a higher temperature for its less defects. |
Databáze: | OpenAIRE |
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