Evaluation of residual stress in sputtered tantalum thin-film
| Autor: | Rebecca Cheung, Andrew Bunting, Asaad K. Al-mashaal |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Annealing (metallurgy) Tantalum Residual stress General Physics and Astronomy chemistry.chemical_element 02 engineering and technology 01 natural sciences Annealing Ion bombardment Sputtering 0103 physical sciences Ultimate tensile strength Thin film 010302 applied physics Metallurgy Surfaces and Interfaces General Chemistry Sputter deposition 021001 nanoscience & nanotechnology Condensed Matter Physics Surfaces Coatings and Films Compressive strength chemistry 0210 nano-technology |
| Zdroj: | Al-Masha'al, A, Bunting, A & Cheung, R 2016, ' Evaluation of residual stress in sputtered tantalum thin-film ', Applied Surface Science . https://doi.org/10.1016/j.apsusc.2016.02.236 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2016.02.236 |
| Popis: | The influence of deposition conditions on the residual stress of sputtered tantalum thin-film has been evaluated in the present study. Films have been deposited by DC magnetron sputtering and curvature measurement method has been employed to calculate the residual stress of the films. Transitions of tantalum film stress from compressive to tensile state have been observed as the sputtering pressure increases. Also, the effect of annealing process at temperature range of 90–300 °C in oxygen ambient on the residual stress of the films has been studied. The results demonstrate that the residual stress of the films that have been deposited at lower sputtering pressure has become more compressive when annealed at 300 °C. Furthermore, the impact of exposure to atmospheric ambient on the tantalum film stress has been investigated by monitoring the variation of the residual stress of both annealed and unannealed films over time. The as-deposited films have been exposed to pure Argon energy bombardment and as result, a high compressive stress has been developed in the films. |
| Databáze: | OpenAIRE |
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