Structural and electrical properties of nitrogen-doped ZnO thin films
| Autor: | Ebru Senadim Tuzemen, Ramazan Esen, Ismail Altuntas, Deniz Kadir Takci, Kamuran Kara, Sezai Elagoz |
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| Přispěvatelé: | [Tuzemen, Ebru Senadim] Cumhuriyet Univ, Dept Phys, Nanotechnol Ctr, TR-58140 Sivas, Turkey -- [Kara, Kamuran] Istanbul Univ, Dept Phys, TR-34314 Istanbul, Turkey -- [Elagoz, Sezai -- Altuntas, Ismail] Cumhuriyet Univ, Dept Nanotechnol Engn, Nanotechnol Ctr, TR-58140 Sivas, Turkey -- [Takci, Deniz Kadir -- Esen, Ramazan] Cukurova Univ, Dept Phys, TR-01330 Adana, Turkey, kara, kamuran -- 0000-0002-9598-8108, Kara, Kamuran -- 0000-0002-9598-8108, TAKCI, DENIZ KADIR -- 0000-0002-9841-242X, Çukurova Üniversitesi |
| Rok vydání: | 2014 |
| Předmět: |
Materials science
Optical properties Band gap Doping Analytical chemistry General Physics and Astronomy Surfaces and Interfaces General Chemistry Vacuum arc Substrate (electronics) Condensed Matter Physics X-ray diffraction Surfaces Coatings and Films Absorbance Condensed Matter::Materials Science symbols.namesake Condensed Matter::Superconductivity Raman spectroscopy X-ray crystallography symbols Thin film |
| Zdroj: | Applied Surface Science. 318:157-163 |
| ISSN: | 0169-4332 |
| Popis: | 9th Nanoscience and Nanotechnology Conference (NANOTR) -- JUN 24-28, 2013 -- Erzurum, TURKEY WOS: 000344380500030 ZnO and nitrogen-doped ZnO thin films were prepared onto glass substrate by pulsed filtered cathodic vacuum arc deposition (PFCVAD) system at room temperature. The influence of doping on the structural, electrical and optical properties of thin films was investigated. XRD studies were carried out to analyze and compare the structural quality of undoped and nitrogen-doped ZnO films. Raman measurement was performed to study the doping effects in the ZnO. The optical transmittances of all films are studied as a function of wavelength using UV-VIS-NIR spectrophotometer. The optical band gap values of the films are found using absorbance spectrums. The electrical studies for the films are carried out by using Hall-effect measurements. (C) 2014 Elsevier B.V. All rights reserved. Scientific Research Project Fund of Cumhuriyet University [F-382] This research was supported by Scientific Research Project Fund of Cumhuriyet University under the project number F-382. The Authors thank to Ozge Baglayan from Anadolu University for Raman measurements. |
| Databáze: | OpenAIRE |
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