High nitrogen composition–induced low interfacial roughness of GaAs 0.978 N 0.022 /GaAs multiple quantum wells grown through solid-source molecular beam epitaxy
| Autor: | Subhananda Chakrabarti, Anuj Bhatnagar, Binita Tongbram, Mahitosh Biswas, Nilesh Shinde, Roshan Makkar |
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| Rok vydání: | 2017 |
| Předmět: |
Diffraction
Raman Spectroscopy Materials science Photoluminescence Surface Properties chemistry.chemical_element Improved Luminescence Efficiency 02 engineering and technology Surface finish 01 natural sciences law.invention Diffusion symbols.namesake Origin law Gainnas 0103 physical sciences General Materials Science 010306 general physics Epitaxial Growth business.industry Mechanical Engineering Gaasn Alloys Temperature (In)Gaasn Multiple Quantum Wells Dimethylhydrazine 021001 nanoscience & nanotechnology Condensed Matter Physics Nitrogen Full width at half maximum chemistry Mechanics of Materials Crystal Structure symbols Optoelectronics Defects Electron microscope 0210 nano-technology Raman spectroscopy business Molecular beam epitaxy |
| Zdroj: | Materials Research Bulletin. 88:242-247 |
| ISSN: | 0025-5408 |
| Popis: | GaAs1-xNx/GaAs multiple quantum wells (MQWs) were grown on GaAs(001) substrates through solid source molecular beam epitaxy under various nitrogen background pressures (NBPs), and the crystal quality at the interface of GaAs1-xNx and GaAs was investigated. X-ray diffraction and electron microscopy confirmed the low interface roughness of MQWs grown at a NBP of 5 x 10(-6) Torr. Surface morphology measurements revealed a smooth surface without whisker-like defect structures. The fabricated MQWs exhibited high photoluminescence intensity because of the reduction in surface recombination with high nitrogen incorporation. Raman spectroscopy confirmed the presence of N-like local vibrational mode, and this was attributed to the presence of phase separation in GaAsN alloys. Rapid thermal annealing improved photoluminescence intensity by 100-fold and substantially reduced full width at half maximum because of MQW homogenization. These results evidence the favorable crystal interface of GaAs0.978Na0.022 alloys. Hence, GaAs0.978N0.022/GaAs MQWs grown under high pressure might be useful in fabricating optoelectronic devices. (C) 2016 Published by Elsevier Ltd. |
| Databáze: | OpenAIRE |
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