Lattice location and thermal stability of implanted nickel in silicon studied by on-line emission channeling
| Autor: | Ulrich Wahl, L. M. C. Pereira, E Bosne, João P. Araújo, J. G. Correia, L. M. Amorim, Daniel Silva, M.R. da Silva |
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| Jazyk: | angličtina |
| Rok vydání: | 2014 |
| Předmět: |
Materials science
Silicon Annealing (metallurgy) Doping Lattice diffusion coefficient General Physics and Astronomy chemistry.chemical_element 02 engineering and technology Condensed Matter 021001 nanoscience & nanotechnology Channelling 01 natural sciences Nickel Crystallography chemistry 0103 physical sciences Thermal stability Diamond cubic 010306 general physics 0210 nano-technology |
| Popis: | We have studied the lattice location of implanted nickel in silicon, for different doping types (n, n, and p). By means of on-line emission channeling, 65Ni was identified on three different sites of the diamond lattice: ideal substitutional sites, displaced bond-center towards substitutional sites (near-BC), and displaced tetrahedral interstitial towards anti-bonding sites (near-T). We suggest that the large majority of the observed lattice sites are not related to the isolated form of Ni but rather to its trapping into vacancy-related defects produced during the implantation. While near-BC sites are prominent after annealing up to 300-500 °C, near-T sites are preferred after 500-600 °C anneals. Long-range diffusion starts at 600-700 °C. We show evidence of Ni diffusion towards the surface and its further trapping on near-T sites at the Rp/2 region, providing a clear picture of the microscopic mechanism of Ni gettering by vacancy-type defects. The high thermal stability of near-BC sites in n-type Si, and its importance for the understanding of P-diffusion gettering are also discussed. © 2014 AIP Publishing LLC. ispartof: Journal of Applied Physics vol:115 issue:2 pages:023504-1 status: published |
| Databáze: | OpenAIRE |
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