Layer-resolved release of epitaxial layers in III-V heterostructure via a buffer-free mechanical separation technique
| Autor: | Honghwi Park, Heungsup Won, Changhee Lim, Yuxuan Zhang, Won Seok Han, Sung-Bum Bae, Chang-Ju Lee, Yeho Noh, Junyeong Lee, Jonghyung Lee, Sunghwan Jung, Muhan Choi, Sunghwan Lee, Hongsik Park |
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| Rok vydání: | 2022 |
| Předmět: | |
| Zdroj: | Science Advances |
| ISSN: | 2375-2548 |
| DOI: | 10.1126/sciadv.abl6406 |
| Popis: | Layer-release techniques for producing freestanding III-V epitaxial layers have been actively developed for heterointegration of single-crystalline compound semiconductors with Si platforms. However, for the release of target epitaxial layers from III-V heterostructures, it is required to embed a mechanically or chemically weak sacrificial buffer beneath the target layers. This requirement severely limits the scope of processable materials and their epi-structures and makes the growth and layer-release process complicated. Here, we report that epitaxial layers in commonly used III-V heterostructures can be precisely released with an atomic-scale surface flatness via a buffer-free separation technique. This result shows that heteroepitaxial interfaces of a normal lattice-matched III-V heterostructure can be mechanically separated without a sacrificial buffer and the target interface for separation can be selectively determined by adjusting process conditions. This technique of selective release of epitaxial layers in III-V heterostructures will provide high fabrication flexibility in compound semiconductor technology. Description Epi-layers of III-V heterostructures can be selectively released at target interfaces without an embedded sacrificial buffer. |
| Databáze: | OpenAIRE |
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