Channeling on boron clusters in silicon
| Autor: | L.J. van IJzendoorn, M.J.A. de Voigt, A. van Loon, L. J. M. Selen |
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| Rok vydání: | 2001 |
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| Zdroj: | Journal of Applied Physics, 90(10), 5032-5037. American Institute of Physics |
| ISSN: | 1089-7550 0021-8979 |
| Popis: | Low energy ion implantation at high doses of boron (>1015 cm–2) in Si is necessary for the fabrication of ultrashallow junctions but can result in the undesirable presence of boron clusters. Values for the dimensions of the lattice distortions in the implanted Si are obtained by comparing the enhanced dechanneling and the direct scattering peak in the region with clusters in a channeled Rutherford backscattering spectrometry spectrum to those from Monte Carlo calculations on a curved crystal structure. Values of about 0.17 and 65 nm are found for the maximum deformation and the length of the distortions in the crystal, respectively, which implies that the lattice distortions extend significantly outside the layer in which the B clusters are supposed to be present. ©2001 American Institute of Physics. |
| Databáze: | OpenAIRE |
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