Low-energy-channeling surface analysis on silicon crystals designed for high-energy-channeling in accelerators
| Autor: | E. Milan, A. Sambo, Vincenzo Guidi, Alberto Vomiero, Yu. A. Chesnokov, Yu. M. Ivanov, Stefano Baricordi, Giuliano Martinelli, Alberto Carnera, W. Scandale, Silvio Restello, G. Della Mea, V.M. Biryukov |
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| Jazyk: | angličtina |
| Rok vydání: | 2005 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Silicon business.industry chemistry.chemical_element Alpha particle Channelling Isotropic etching Relativistic particle Crystal Semiconductor chemistry Etching (microfabrication) Physics::Accelerator Physics Optoelectronics Atomic physics business |
| Popis: | Channeling of relativistic particles in bent Si crystals is a powerful technique for use with accelerators. Its efficiency can be found to be highly dependent on the state of the surface of the crystal steering the particles. We investigated the morphology and structure of the surface of the samples that have been used with high efficiency for channeling in accelerators. Low-energy channeling of 2MeVα particles or protons was used as a probe. We found that mechanical treatment of the samples leads to a superficial damaged layer, which is correlated to efficiency limitations of the crystal in accelerators. In contrast, chemical etching, which was used to treat the surface of the most efficient crystals, leaves a surface with superior perfection. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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