Electrical Properties of Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon
| Autor: | Pasquale Scarlino, Karl Petersson, S. Yadav, J. Karthik, D. M. T. van Zanten, Michael J. Manfra, Geoffrey C. Gardner, M. Eichinger, Sergei Gronin, L. O. Andersen, A. Hertel, Charles Marcus |
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| Rok vydání: | 2021 |
| Předmět: |
Josephson effect
Materials science Silicon FOS: Physical sciences ENERGY-GAP STRUCTURE General Physics and Astronomy chemistry.chemical_element Substrate (electronics) EPITAXY Superconductivity (cond-mat.supr-con) Planar Condensed Matter::Superconductivity Mesoscale and Nanoscale Physics (cond-mat.mes-hall) Superconductivity Condensed Matter - Mesoscale and Nanoscale Physics Condensed matter physics business.industry Condensed Matter - Superconductivity Transmon Condensed Matter::Mesoscopic Systems and Quantum Hall Effect SUPERCURRENT Semiconductor chemistry Product (mathematics) business QUANTUM JOSEPHSON |
| Zdroj: | Hertel, A, Andersen, L O, van Zanten, D M T, Eichinger, M, Scarlino, P, Yadav, S, Karthik, J, Gronin, S, Gardner, G C, Manfra, M J, Marcus, C M & Petersson, K D 2021, ' Electrical Properties of Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon ', Physical Review Applied, vol. 16, no. 4, 044015 . https://doi.org/10.1103/PhysRevApplied.16.044015 |
| ISSN: | 2331-7019 |
| Popis: | We present a superconductor-semiconductor materials system that is both scalable and monolithically integrated on a silicon substrate. It uses selective-area growth of $\mathrm{Al}$-$\mathrm{In}\mathrm{As}$ hybrid structures on a planar III-V buffer layer, grown directly on a high-resistivity silicon substrate. We characterize the electrical properties of this materials system at millikelvin temperatures and observe a high average field-effect mobility of $\ensuremath{\mu}\ensuremath{\approx}3200\phantom{\rule{0.2em}{0ex}}{\mathrm{cm}}^{2}\mathrm{/Vs}$ for the $\mathrm{In}\mathrm{As}$ channel and a hard induced superconducting gap. Josephson junctions exhibit a high interface transmission, $\mathcal{T}\ensuremath{\approx}0.75$, a gate-voltage-tunable switching current with a product of critical current and normal state resistance, ${I}_{C}{R}_{N}\ensuremath{\approx}83\phantom{\rule{0.2em}{0ex}}\ensuremath{\mu}\mathrm{V}$, and signatures of multiple Andreev reflections. These results pave the way for scalable and high-coherence gate-voltage-tunable transmon devices and other superconductor-semiconductor hybrids fabricated directly on silicon. |
| Databáze: | OpenAIRE |
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