Enhanced Electrical Properties of Atomic Layer Deposited LaxAlyO Thin Films with Stress Relieved Preoxide Pretreatment
Autor: | Yongte Wang, Hongxia Liu, Lu Zhao, Xing Wang |
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Jazyk: | angličtina |
Rok vydání: | 2018 |
Předmět: |
Letter
Materials science Oxide Time-dependent gate oxide breakdown 02 engineering and technology 01 natural sciences lcsh:Technology Stress (mechanics) chemistry.chemical_compound 0103 physical sciences General Materials Science Thin film Composite material lcsh:Microscopy SRPO lcsh:QC120-168.85 010302 applied physics lcsh:QH201-278.5 lcsh:T 021001 nanoscience & nanotechnology MIS capacitor LaxAlyO Chemical bond chemistry ALD lcsh:TA1-2040 electrical properties lcsh:Descriptive and experimental mechanics lcsh:Electrical engineering. Electronics. Nuclear engineering 0210 nano-technology lcsh:Engineering (General). Civil engineering (General) Layer (electronics) lcsh:TK1-9971 Order of magnitude |
Zdroj: | Materials, Vol 11, Iss 9, p 1601 (2018) Materials |
ISSN: | 1996-1944 |
Popis: | The impact of stress relieved preoxide (SRPO) interface engineering on the physical and electrical properties of LaxAlyO films was investigated. It was proved that the SRPO pretreatment has little influence on the surface morphology of LaxAlyO films and the chemical bond composition of LaxAlyO/Si interface. However, the SRPO pretreated MIS capacitor displayed obvious improvement in decreasing the amount of trapped oxide charges and interfacial traps. As a result, a reduction of more than one order of magnitude in the gate leakage current density was obtained. The breakdown field strength and TDDB reliability of the LaxAlyO film treated with SRPO were also enhanced. |
Databáze: | OpenAIRE |
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