Controlling the Current Conduction Asymmetry of HfO 2 Metal–Insulator–Metal Diodes by Interposing Al 2 O 3 Layer
| Autor: | Patrice Gonon, Woojin Jeon, Ahmad Chaker, Olivier Salicio, Christophe Vallée |
|---|---|
| Přispěvatelé: | Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]) |
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
[PHYS]Physics [physics] Materials science business.industry Metal-insulator-metal 01 natural sciences Cathode Electronic Optical and Magnetic Materials law.invention law 0103 physical sciences Electrode Optoelectronics Work function Electrical and Electronic Engineering Current (fluid) business Layer (electronics) Current density ComputingMilieux_MISCELLANEOUS Diode |
| Zdroj: | IEEE Transactions on Electron Devices IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2019, 66 (1), pp.402-406. ⟨10.1109/TED.2018.2881220⟩ IEEE Transactions on Electron Devices, 2019, 66 (1), pp.402-406. ⟨10.1109/TED.2018.2881220⟩ |
| ISSN: | 0018-9383 |
| Popis: | Metal–insulator–metal (MIM) diodes with bulk-limited current conduction asymmetry employing interposed Al2O3 layer in 6-nm-thick HfO2 film have been investigated. The current density is decreased as the Al2O3 layer is located far from the electron injection electrode (i.e., cathode). Also, the work function difference of the electrode does not affect the asymmetry of the MIM diodes. Asymmetry of current conduction is attributed to the control of bulk-limited current conduction by the interposed Al2O3 layer. Physicochemical analysis also confirms the dependence of the location of Al2O3 layer on the bulk-limited current asymmetry. |
| Databáze: | OpenAIRE |
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