Analytical electron microscopy study of nanometre-scale oxide formed in contact-hole-bottom Si surfaces

Autor:	Sungwook Park, Ho‐Seok Lee, Joong-Jung Kim, Yoon-Baek Park, Tae-Sun Back, Soun-Young Lee, Ju-Chul Park, Jun-Mo Yang
Rok vydání:	2003
Předmět:	Suboxide Analytical electron microscopy chemistry.chemical_compound Materials science chemistry Etching (microfabrication) Transmission electron microscopy Contact resistance Analytical chemistry Oxide Nanometre Reactive-ion etching Instrumentation
Zdroj:	Journal of electron microscopy. 52(3)
ISSN:	0022-0744
Popis:	Nanometre-scale interfacial oxides formed in contact-hole -bottom Si surfaces were investigated by analytical electron microscopy coupled with a field-emission transmission electron microscope. The results showed that thechemical state of the residual oxide formed during reactive-ion etching was mostly changed from the suboxide of Si 2 + or Si 3 + to the oxide of Si 4 + by the following light-etch treatment. Consequently, the process of removing the residual oxide by light-etch treatment was improved and it contributed to the accomplishment of lower contact resistance.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::74a57b2ab25b0803b52d8d3c9a140945 https://pubmed.ncbi.nlm.nih.gov/12892220 Zobrazit plný text záznamu