Autor: |
Albert Hertel, Michaela Eichinger, Laurits O. Andersen, David M.T. van Zanten, Sangeeth Kallatt, Pasquale Scarlino, Anders Kringhøj, José M. Chavez-Garcia, Geoffrey C. Gardner, Sergei Gronin, Michael J. Manfra, András Gyenis, Morten Kjaergaard, Charles M. Marcus, Karl D. Petersson |
Rok vydání: |
2022 |
Předmět: |
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Zdroj: |
Physical Review Applied. 18 |
ISSN: |
2331-7019 |
DOI: |
10.1103/physrevapplied.18.034042 |
Popis: |
We present a gate-voltage tunable transmon qubit (gatemon) based on planar InAs nanowires that are selectively grown on a high resistivity silicon substrate using III-V buffer layers. We show that low loss superconducting resonators with an internal quality of $2\times 10^5$ can readily be realized using these substrates after the removal of buffer layers. We demonstrate coherent control and readout of a gatemon device with a relaxation time, $T_{1}\approx 700\,\mathrm{ns}$, and dephasing times, $T_2^{\ast}\approx 20\,\mathrm{ns}$ and $T_{\mathrm{2,echo}} \approx 1.3\,\mathrm{\mu s}$. Further, we infer a high junction transparency of $0.4 - 0.9$ from an analysis of the qubit anharmonicity. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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