Gate-Tunable Transmon Using Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon

Autor: Albert Hertel, Michaela Eichinger, Laurits O. Andersen, David M.T. van Zanten, Sangeeth Kallatt, Pasquale Scarlino, Anders Kringhøj, José M. Chavez-Garcia, Geoffrey C. Gardner, Sergei Gronin, Michael J. Manfra, András Gyenis, Morten Kjaergaard, Charles M. Marcus, Karl D. Petersson
Rok vydání: 2022
Předmět:
Zdroj: Physical Review Applied. 18
ISSN: 2331-7019
DOI: 10.1103/physrevapplied.18.034042
Popis: We present a gate-voltage tunable transmon qubit (gatemon) based on planar InAs nanowires that are selectively grown on a high resistivity silicon substrate using III-V buffer layers. We show that low loss superconducting resonators with an internal quality of $2\times 10^5$ can readily be realized using these substrates after the removal of buffer layers. We demonstrate coherent control and readout of a gatemon device with a relaxation time, $T_{1}\approx 700\,\mathrm{ns}$, and dephasing times, $T_2^{\ast}\approx 20\,\mathrm{ns}$ and $T_{\mathrm{2,echo}} \approx 1.3\,\mathrm{\mu s}$. Further, we infer a high junction transparency of $0.4 - 0.9$ from an analysis of the qubit anharmonicity.
Databáze: OpenAIRE