Performance boost of crystalline in-Ga-Zn-O material and transistor with extremely low leakage for IoT normally-off CPU application
| Autor: | Xiang Li, Mu Yi Liu, Chi Chang Shuai, Tzung Han Wu, J Y Wu, Shunpei Yamazaki, Shao Hui Wu, Ming Chang Lu, Kiyoshi Kato, Daisuke Matsubayashi, X Y Jia, Hung Chan Lin |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Engineering Electron mobility Analogue electronics business.industry 020208 electrical & electronic engineering Transistor Electrical engineering 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences law.invention law Logic gate 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics Central processing unit Performance improvement 0210 nano-technology business Internet of Things Leakage (electronics) |
| Zdroj: | 2017 Symposium on VLSI Technology. |
| Popis: | The worldwide first 100MHz dynamic oxide semiconductor RAM (DOSRAM) is successfully demonstrated using a new high-mobility crystalline In-Ga-Zn-O (IGZO) material. The new IGZO exhibits around two times carrier mobility of conventional IGZO, while still achieving an extremely low off-state leakage (I off ) at ∼10−21A (zA) level. Attributed to DOSRAM performance improvement, 100MHz normally-off (Noff) CPU is successfully demonstrated with drastically reduced power consumption (∼94% power reduction for ARM Cortex-M0 and ∼70% power reduction for memory), making it a promising candidate for IoT application. In addition, an OS-FPGA is successfully fabricated by integration of 65nm SiFET and 60nm oxide semiconductor FET (OSFET) with an operation frequency of 360MHz. The application of the OSFET in analog circuits will also be discussed in this paper. |
| Databáze: | OpenAIRE |
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