Nanoscale Conductive Filament with Alternating Rectification as an Artificial Synapse Building Block
| Autor: | Diing Shenp Ang, Abhisek Kole, Dan Berco, Mohamed Yousef Hassan, Pranav Sairam Kalaga, Sankara Rao Gollu, Yu Zhou |
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| Přispěvatelé: | School of Electrical and Electronic Engineering |
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Artificial neural network Computer science General Engineering General Physics and Astronomy 02 engineering and technology Memristor 021001 nanoscience & nanotechnology Topology 01 natural sciences law.invention Resistive random-access memory Electrical Synapses Rectification law 0103 physical sciences Wide dynamic range Electrical and electronic engineering [Engineering] General Materials Science Synaptic Gap Junctions Crossbar switch 0210 nano-technology Block (data storage) |
| Zdroj: | ACS Nano. 12:5946-5955 |
| ISSN: | 1936-086X 1936-0851 |
| DOI: | 10.1021/acsnano.8b02193 |
| Popis: | A popular approach for resistive memory (RRAM)-based hardware implementation of neural networks utilizes one (or two) device that functions as an analog synapse in a crossbar structure of perpendicular pre- and postsynaptic neurons. An ideal fully automated, large-scale artificial neural network, which matches a biologic counterpart (in terms of density and energy consumption), thus requires nanosized, extremely low power devices with a wide dynamic range and multilevel functionality. Unfortunately the trade-off between these traits proves to be a serious obstacle in the realization of brain-inspired computing platforms yet to be overcome. This study demonstrates an alternative manner for the implementation of artificial synapses in which the local stoichiometry of metal oxide materials is delicately manipulated to form a single nanoscale conductive filament that may be used as a synaptic gap building block in an equivalent manner to the functionality of a single connexon (a signaling pore between synapses) with dynamic rectification direction. The structure, of a few nanometers in size, is based on the formation of defect states and shows current rectification properties that can be consecutively flipped to a forward or reverse direction to create either an excitatory or inhibitory (positive or negative) weight parameter. Alternatively, a plurality of these artificial connexons may be used to create a synthetic rectifying synaptic gap junction. In addition, the junction plasticity may be altered in a differential digital scheme (opposed to conventional analog RRAM conductivity manipulation) by changing the ratio of forward to reverse rectifying connexons. |
| Databáze: | OpenAIRE |
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