Test-beam results of a SOI pixel-detector prototype
Autor: | A. Fiergolski, P. Kapusta, Andreas Nürnberg, Dominik Dannheim, Roma Bugiel, Wojciech Kucewicz, D. Hynds, Szymon Bugiel, R.M. Münker, Marek Idzik |
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Rok vydání: | 2018 |
Předmět: |
Physics
Nuclear and High Energy Physics Pixel Physics::Instrumentation and Detectors 010308 nuclear & particles physics business.industry Detector Silicon on insulator 01 natural sciences Noise (electronics) Computer Science::Other Charge sharing Optics CMOS 0103 physical sciences ddc:530 High Energy Physics::Experiment Wafer Detectors and Experimental Techniques 010306 general physics business Instrumentation Image resolution Particle Physics - Experiment |
Zdroj: | Nuclear instruments & methods in physics research / A, 901, 173-179 Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment |
ISSN: | 0168-9002 1872-9576 |
DOI: | 10.1016/j.nima.2018.06.017 |
Popis: | This paper presents the test-beam results of a monolithic pixel-detector prototype fabricated in 200nm Silicon-On-Insulator (SOI) CMOS technology. The SOI detector was tested at the CERN SPS H6 beam line. The detector is fabricated on a 500 μ m thick high-resistivity float-zone n-type (FZ-n) wafer. The pixel size is 30 μ m × 30 μ m and its readout uses a source-follower configuration. The test-beam data are analysed in order to compute the spatial resolution and detector efficiency. The analysis chain includes pedestal and noise calculation, cluster reconstruction, as well as alignment and η -correction for non-linear charge sharing. The results show a spatial resolution of about 4.3 μ m. |
Databáze: | OpenAIRE |
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