Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure
| Autor: | Yahya Moubarak Meziani, V. V. Popov, Hiroaki Minamide, Denis V. Fateev, Taiichi Otsuji, Hiromasa Ito, Yuye Wang, Wojciech Knap, Stephane Boubanga Tombet, Takayuki Watanabe, D. Coquillat, Yudai Tanimoto |
|---|---|
| Přispěvatelé: | Kotelnikov Institute of Radio Engineering and Electronics (IRE), Russian Academy of Sciences [Moscow] (RAS), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Departamento de Fisica Aplicada [Salamanca], Universidad de Salamanca, Research Institute of Electrical Communication [Sendai] (RIEC), Tohoku University [Sendai], ANR WITH, ANR-10-JTIC-0004,WITH(2010) |
| Rok vydání: | 2012 |
| Předmět: |
Materials science
Terahertz radiation Terahertz Plasmon 02 engineering and technology High-electron-mobility transistor Grating 7. Clean energy 01 natural sciences Responsivity Optics 0103 physical sciences Materials Chemistry Electrical and Electronic Engineering HEMT 010302 applied physics Photocurrent business.industry Detector Asymmetry 021001 nanoscience & nanotechnology Condensed Matter Physics [PHYS.PHYS.PHYS-GEN-PH]Physics [physics]/Physics [physics]/General Physics [physics.gen-ph] Electronic Optical and Magnetic Materials Terahertz spectroscopy and technology Optoelectronics 0210 nano-technology business |
| Zdroj: | Solid-State Electronics Proceedings of SPIE TERAHERTZ PHYSICS, DEVICES, AND SYSTEMS VI: ADVANCED APPLICATIONS IN INDUSTRY AND DEFENSE Solid-State Electronics, Elsevier, 2012, 78, pp.109-114. ⟨10.1016/j.sse.2012.05.047⟩ |
| ISSN: | 0038-1101 |
| Popis: | We report on ultrahigh sensitive, broadband terahertz (THz) detectors based on asymmetric dual-grating-gate (A-DGG) high electron mobility transistors, demonstrating a record responsivity of 2.2 kV/W at 1 THz with a superior low noise equivalent power of 15 pW/√Hz using InGaAs/InAlAs/InP material systems. When THz radiation is absorbed strong THz photocurrent is first generated by the nonlinearity of the plasmon modes resonantly excited in undepleted portions of the 2D electron channel under the high-biased sub-grating of the A-DGG (as a quadratic nature of the product of local carrier density and velocity perturbations), then the THz photovoltaic response is read out at high-impedance parts of 2D channel under the other sub-grating biased at the level close to the threshold. Extraordinary enhancement by more than two orders of magnitude of the responsivity is verified with respect to that for a symmetric DGG structure. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect