CoSi2 formation in contact systems based on Ti?Co alloy with low cobalt content

Autor:	D. G. Gromov, V.P. Pugachevich, A.I. Mochalov
Rok vydání:	1995
Předmět:	Materials science Diffusion barrier Annealing (metallurgy) Schottky barrier Alloy Metallurgy chemistry.chemical_element Titanium alloy General Chemistry engineering.material chemistry Chemical engineering Cavity magnetron engineering General Materials Science Cobalt Ohmic contact
Zdroj:	Applied Physics A: Materials Science & Processing. 61:565-567
ISSN:	1432-0630 0947-8396
DOI:	10.1007/s003390050241
Popis:	The process of integrated-circuit contact formation based on Ti−Co alloy with low content of cobalt has been investigated. By AES and XRD it is shown that nitrogen doping of the alloy film during magnetron deposition and its subsequent annealing at 800–850°C allow simultaneously to obtain a CoSi2 contact layer and a diffusion barrier layer on the basis of TiN. Electrical characteristics of Schottky barrier and ohmic contacts have been studied.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::73ed502f918987badd9285b01b7f0f24 https://doi.org/10.1007/s003390050241 Zobrazit plný text záznamu Full text from SpringerLink