Top-down fabricated tapered GaAs nanowires with sacrificial etching of the mask
| Autor: | Navneet Dhindsa, Simarjeet S. Saini |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Fabrication
Materials science Nanowire Physics::Optics Bioengineering 02 engineering and technology 01 natural sciences 010309 optics Condensed Matter::Materials Science Optics Etching (microfabrication) 0103 physical sciences Broadband General Materials Science Electrical and Electronic Engineering Absorption (electromagnetic radiation) Coupling business.industry Mechanical Engineering General Chemistry Conical surface Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Computer Science::Other Mechanics of Materials Excited state 0210 nano-technology business |
| Zdroj: | Nanotechnology. 28:235301 |
| ISSN: | 1361-6528 0957-4484 |
| DOI: | 10.1088/1361-6528/aa6fe9 |
| Popis: | A novel fabrication method using controlled sacrificial etching of the mask is utilized to fabricate tapered vertical GaAs nanowire arrays. Experimental measurements of the absorption characteristics show that the tapered nanowires absorb over a broadband range as compared to cylindrical ones. The broadband characterization is verified by using optical modeling and results from improved coupling of the nanowires due to distinct radial HE modes being excited separately in the taper and the cylindrical part. The absorption is found to be more broadband as compared to conical nanowires studied so far. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|