Control of structural transition in FeSe1−xTex thin films by changing substrate materials
Autor: | Yoshinori Imai, Yuichi Sawada, Atsutaka Maeda, Daisuke Asami, Masataka Kawai, Fuyuki Nabeshima |
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Jazyk: | angličtina |
Rok vydání: | 2017 |
Předmět: |
Superconductivity
Multidisciplinary Materials science Condensed matter physics Chalcogenide 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology 01 natural sciences Pulsed laser deposition chemistry.chemical_compound chemistry Electrical resistivity and conductivity Liquid crystal 0103 physical sciences Thin film 010306 general physics 0210 nano-technology Phase diagram |
Zdroj: | Scientific Reports. |
ISSN: | 2045-2322 |
DOI: | 10.1038/srep46653 |
Popis: | Iron chalcogenide superconductors FeSe1−xTe x are important materials for investigating the relation be-tween the superconductivity and the orbital and/or electronic nematic order, because the end member material FeSe exhibits a structural transition without a magnetic phase transition. However, the phase separation occurs in the region of 0.1 ≤ x ≤ 0.4 for bulk samples, and it prevents the complete understanding of this system. Here, we report the successful fabrication of epitaxial thin films of FeSe1−xTe x with 0 ≤ x ≤ 0.7, which includes the phase-separation region, on LaAlO3 substrates via pulsed laser deposition. In the temperature dependences of differential resistivity for these films with 0 ≤ x ≤ 0.3, the dip- or peak- anomalies, which are well-known to be originated from the structural transition in FeSebulk samples, are observed at the characteristic temperatures, T*. The doping-temperature (x–T) phase diagram of FeSe1−xTex films clearly shows that T* decreases with increasing x, and that Tc suddenly changes at a certain Te content where T* disappears, which turns out to be commonly observed for both films on LaAlO3 and CaF2. These indicate the importance of controlling the structural transition to achieve high Tc in iron chalcogenides. |
Databáze: | OpenAIRE |
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