Epitaxial Growth of MOF Thin Film for Modifying the Dielectric Layer in Organic Field-Effect Transistors
| Autor: | Zhi-Gang Gu, Jian Zhang, Qingdong Zheng, Shan-Ci Chen, Wen-Qiang Fu |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
chemistry.chemical_classification
Materials science business.industry 02 engineering and technology Polymer 010402 general chemistry 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences 0104 chemical sciences Threshold voltage chemistry Dielectric layer Electrode Optoelectronics General Materials Science Field-effect transistor Thin film 0210 nano-technology business |
| Zdroj: | ACS Applied Materials & Interfaces. 9:7259-7264 |
| ISSN: | 1944-8252 1944-8244 |
| DOI: | 10.1021/acsami.6b14541 |
| Popis: | Metal–organic framework (MOF) thin films are important in the application of sensors and devices. However, the application of MOF thin films in organic field effect transistors (OFETs) is still a challenge to date. Here, we first use the MOF thin film prepared by a liquid-phase epitaxial (LPE) approach (also called SURMOFs) to modify the SiO2 dielectric layer in the OFETs. After the semiconductive polymer of PTB7-Th (poly[4,8-bis(5-(2-ethylhexyl)thiophene-2-yl)benzo[1,2-b:4,5-b′]dithiophene-co-3-fluorothieno[3,4-b]thiophene-2-carboxylate]) was coated on MOF/SiO2 and two electrodes on the semiconducting film were deposited sequentially, MOF-based OFETs were fabricated successfully. By controlling the LPE cycles of SURMOF HKUST-1 (also named Cu3(BTC)2, BTC = 1,3,5-benzenetricarboxylate), the performance of the HKUST-1/SiO2-based OFETs showed high charge mobility and low threshold voltage. This first report on the application of MOF thin film in OFETs will offer an effective approach for designing a new kind... |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|