Rectification in a Eu-chalcogenide-based superconducting diode
| Autor: | Strambini, E., Spies, M., Ligato, N., Ilic, S., Rouco, M., Orellana, C. G., Ilyn, M., Rogero, C., Bergeret, F. S., Moodera, J. S., Virtanen, P., Heikkilä, T. T., Giazotto, F. |
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| Rok vydání: | 2021 |
| Předmět: | |
| DOI: | 10.48550/arxiv.2109.01061 |
| Popis: | Diodes are key elements for electronics, optics, and detection. The search for a material combination providing the best performances for the required application is continuously ongoing. Here, we present a superconducting spintronic tunnel diode based on the strong spin filtering and splitting generated by an EuS thin film between a superconducting Al and a normal metal Cu layer. The Cu/EuS/Al tunnel junction achieves a large rectification (up to $\sim40$\%) already for a small voltage bias ($\sim 200$ $\mu$V) thanks to the small energy scale of the system: the Al superconducting gap. With the help of an analytical theoretical model we can link the maximum rectification to the spin polarization of the barrier and describe the quasi-ideal Schottky-diode behavior of the junction. This cryogenic spintronic rectifier is promising for the application in highly-sensitive radiation detection for which two different configurations are evaluated. In addition, the superconducting diode may pave the way for future low-dissipation and fast superconducting electronics. Comment: 17 pages, 12 figures |
| Databáze: | OpenAIRE |
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