Insertion of a Graphene Oxide Layer into a Cu/SiO2/Pt Structure to Overcome Performance Degradation in a Vaporless Environment
| Autor: | Chao-Cheng Lin, Chih-Yi Liu, Chun Hung Lai, Chih-Peng Yang |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Oxide 02 engineering and technology Electrochemistry 01 natural sciences RRAM lcsh:Technology Spectral line law.invention lcsh:Chemistry chemistry.chemical_compound law Ionization 0103 physical sciences General Materials Science Instrumentation lcsh:QH301-705.5 010302 applied physics Fluid Flow and Transfer Processes Graphene lcsh:T Process Chemistry and Technology General Engineering 021001 nanoscience & nanotechnology lcsh:QC1-999 Computer Science Applications Resistive random-access memory chemistry Chemical engineering lcsh:Biology (General) lcsh:QD1-999 lcsh:TA1-2040 Electrode graphene oxide 0210 nano-technology vaporless environment lcsh:Engineering (General). Civil engineering (General) Layer (electronics) lcsh:Physics |
| Zdroj: | Applied Sciences, Vol 9, Iss 7, p 1432 (2019) Applied Sciences Volume 9 Issue 7 |
| ISSN: | 2076-3417 |
| Popis: | A Cu/SiO2/Pt structure is usually used to study the resistive memory properties of an electrochemical resistive random access memory. It can be reversibly switched between low- and high-resistance states by using DC voltages in the atmosphere. However, its resistive switching behavior disappears in a vaporless environment because no conducting filaments can be formed within the Cu/SiO2/Pt structure. This study inserted a graphene oxide (GO) layer to fabricate a Cu/GO/SiO2/Pt structure that could be resistively switched in a vaporless environment. The X-ray photoelectron spectra depth profile of the Cu/GO/SiO2/Pt structure showed that oxygen-related groups of the GO film reacted with the Cu electrode. The GO film assisted Cu ionization in a vaporless environment, and Cu ions could migrate in an electrical field to the Pt electrode. Cu conducting filaments were formed and ruptured by different polarity voltages, and the resistance of the Cu/GO/SiO2/Pt structure could be reversibly switched in a vaporless environment. A schematic model was proposed to explain the switching mechanisms in the atmosphere and a vaporless environment. |
| Databáze: | OpenAIRE |
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