Degradation of AlGaN during high-temperature annealing monitored by ultraviolet Raman scattering
| Autor: | S. Clur, D. N. Batchelder, Martin Kuball, H. S. Sands, Olivier Briot, F. Demangeot, J. Frandon, M. A. Renucci |
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| Přispěvatelé: | Groupe d'étude des semiconducteurs (GES), Centre National de la Recherche Scientifique (CNRS)-Université Montpellier 2 - Sciences et Techniques (UM2) |
| Jazyk: | angličtina |
| Rok vydání: | 1999 |
| Předmět: |
010302 applied physics
Photoluminescence Materials science Physics and Astronomy (miscellaneous) Annealing (metallurgy) Analytical chemistry Wide-bandgap semiconductor 02 engineering and technology 021001 nanoscience & nanotechnology medicine.disease_cause 01 natural sciences GAN symbols.namesake 0103 physical sciences symbols medicine [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] Thermal stability 0210 nano-technology Raman spectroscopy Pyrolysis Ultraviolet Raman scattering |
| Zdroj: | Applied Physics Letters Applied Physics Letters, American Institute of Physics, 1999, 74, pp.549-551 |
| ISSN: | 0003-6951 |
| Popis: | International audience; We have illustrated the use of ultraviolet (UV) Raman scattering to investigate the thermal stability of AlGaN layers with high-aluminum content. The degradation pathway of Al0.72Ga0.28N was monitored for high-temperature treatments up to 1200 degrees C. For annealing temperatures higher than 1150 degrees C, the Al0.72Ga0.28N film decomposes: a low- and a high-aluminum composition AlxGa1-xN phase emerge. At 1100 degrees C, prior to the Al0.72Ga0.28N decomposition, UV Raman scattering detects the buildup of a large strain in the Al0.72Ga0.28N film The crystalline quality of Al0.72Ga0.28N is unaffected up to 1000 degrees C. (C) 1999 American Institute of Physics. [S0003-6951(99)00704-4]. |
| Databáze: | OpenAIRE |
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