1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system
| Autor: | V. Loyo-Maldonado, Anders Kragh Hansen, E. Papastathopoulos, Peter M. W. Skovgaard, M. L. Stock, P. Heist, Ole B. Jensen, Danny Noordegraaf, Mathias Christensen |
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| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
Materials science
Lithium niobate 02 engineering and technology 01 natural sciences Semiconductor laser theory law.invention 010309 optics chemistry.chemical_compound Optics SDG 3 - Good Health and Well-being law Diffraction-Limited Light 0103 physical sciences Laser diode business.industry Semiconductor Lasers Tapered Diode Lasers Second-harmonic generation Nonlinear optics 021001 nanoscience & nanotechnology Distributed Bragg reflector Laser Second Harmonic Generation chemistry Optoelectronics Nonlinear Optics Laser beam quality 0210 nano-technology business Yellow Lasers |
| Zdroj: | Hansen, A K, Christensen, M, Noordegraaf, D, Heisterberg, M, Papastathopoulos, E, Loyo-Maldonado, V, Jensen, O B, Stock, M L & Skovgaard, P M W 2017, 1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system . in Proceedings of SPIE . vol. 10088, 1008802, SPIE-International Society for Optical Engineering, Proceedings of SPIE-The International Society for Optical Engineering, Nonlinear Frequency Generation and Conversion: Materials and Devices XVI, San Francisco, California, United States, 28/01/2017 . https://doi.org/10.1117/12.2251964 |
| DOI: | 10.1117/12.2251964 |
| Popis: | Semiconductor lasers are ideal sources for efficient electrical-to-optical power conversion and for many applications where their small size and potential for low cost are required to meet market demands. Yellow lasers find use in a variety of bio-related applications, such as photocoagulation, imaging, flow cytometry, and cancer treatment. However, direct generation of yellow light from semiconductors with sufficient beam quality and power has so far eluded researchers. Meanwhile, tapered semiconductor lasers at near-infrared wavelengths have recently become able to provide neardiffraction- limited, single frequency operation with output powers up to 8 W near 1120 nm.We present a 1.9 W single frequency laser system at 562 nm, based on single pass cascaded frequency doubling of such a tapered laser diode. The laser diode is a monolithic device consisting of two sections: a ridge waveguide with a distributed Bragg reflector, and a tapered amplifier. Using single-pass cascaded frequency doubling in two periodically poled lithium niobate crystals, 1.93 W of diffraction-limited light at 562 nm is generated from 5.8 W continuous-wave infrared light. When turned on from cold, the laser system reaches full power in just 60 seconds. An advantage of using a single pass configuration, rather than an external cavity configuration, is increased stability towards external perturbations. For example, stability to fluctuating case temperature over a 30 K temperature span has been demonstrated. The combination of high stability, compactness and watt-level power range means this technology is of great interest for a wide range of biological and biomedical applications. © (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE |
| Databáze: | OpenAIRE |
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