Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer

Autor:	Hao-Chung Kuo, Tzu Chun Lu, Sheng Chieh Yang, Min Yung Ke, Guan Jhong Lin, Yun Wei Cheng, Liang Yi Chen, Jr-Hau He, Yu Hsin Lu, Jian-Jang Huang
Rok vydání:	2010
Předmět:	Materials science business.industry Nanowire Chemical vapor deposition Electroluminescence medicine.disease_cause Atomic and Molecular Physics and Optics law.invention law medicine Optoelectronics Light emission business Layer (electronics) Ultraviolet Quantum tunnelling Light-emitting diode
Zdroj:	Optics Letters. 35:4109
ISSN:	1539-4794 0146-9592
DOI:	10.1364/ol.35.004109
Popis:	Low-temperature electroluminescence from ZnO nanowire light-emitting arrays is reported. By inserting a thin MgO current blocking layer in between ZnO nanowire and p-GaN, high-purity UV light emission at wavelength 398 nm was obtained. As the temperature is decreased, contrary to the typical GaN-based light emitting diodes, our device shows a decrease of optical output intensity. The results are associated with various carrier tunneling processes and frozen MgO defects.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::72bf7917041bcb0f16ecead4ea44f143 https://doi.org/10.1364/ol.35.004109 Zobrazit plný text záznamu