Fabrication of planar sub-micron Schottky diodes for terahertz imaging applications

Autor:	Arnaldo D'Amico, Michele Ortolani, F. Gatta, Vittorio Foglietti, D. Dominijanni, Ennio Giovine, R. Casini
Jazyk:	angličtina
Rok vydání:	2011
Předmět:	Materials science Fabrication Terahertz radiation business.industry Schottky diode Schottky diodes Dielectric High-electron-mobility transistor Gallium arsenide chemistry.chemical_compound chemistry THz imaging Optoelectronics business Penetration depth Noise-equivalent power
Zdroj:	15th Italian Conference on Sensors and Microsystems, AISEM 2010, pp. 247–251, 08-10/02/2010 info:cnr-pdr/source/autori:Gatta, Francesco; Casini, Roberto; D'Amico, Arnaldo; Ortolani, Michele; Giovine, Ennio; Dominijanni, Donatella; Foglietti, Vittorio/congresso_nome:15th Italian Conference on Sensors and Microsystems, AISEM 2010/congresso_luogo:/congresso_data:08-10%2F02%2F2010/anno:2011/pagina_da:247/pagina_a:251/intervallo_pagine:247–251 Lecture Notes in Electrical Engineering ISBN: 9789400713239
DOI:	10.1007/978-94-007-1324-6_38
Popis:	Imaging sensors employing sub-millimeter waves and terahertz radiation (frequencies from 100 to 3000 GHz) are needed for security applications requiring stand-off, non-destructive sensing, due to its much larger penetration depth into dielectric materials. © 2011 Springer Science+Business Media B.V.
Databáze:	OpenAIRE
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