High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT
| Autor: | Jing Rong Peng, Jin Ji Dai, Han Chieh Ho, Hua Chiang Wen, Wei Fan Wang, Ssu Kuan Wu, Wu Ching Chou, Thi Thu Mai, Cheng Wei Liu |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Hall measurement
Materials science General Chemical Engineering Diffusion Analytical chemistry 02 engineering and technology High-electron-mobility transistor Chemical vapor deposition 01 natural sciences Article PL spectroscopy Hall effect 0103 physical sciences General Materials Science Metalorganic vapour phase epitaxy QD1-999 010302 applied physics Mg doping Doping 021001 nanoscience & nanotechnology Volumetric flow rate Chemistry MOCVD 0210 nano-technology Saturation (chemistry) GaN material |
| Zdroj: | Nanomaterials Nanomaterials, Vol 11, Iss 1766, p 1766 (2021) Volume 11 Issue 7 |
| ISSN: | 2079-4991 |
| Popis: | The effect of Mg doping on the electrical and optical properties of the p-GaN/AlGaN structures on a Si substrate grown by metal organic chemical vapor deposition was investigated. The Hall measurement showed that the activation efficiency of the sample with a 450 sccm Cp2Mg flow rate reached a maximum value of 2.22%. No reversion of the hole concentration was observed due to the existence of stress in the designed sample structures. This is attributed to the higher Mg-to-Ga incorporation rate resulting from the restriction of self-compensation under compressive strain. In addition, by using an AlN interlayer (IL) at the interface of p-GaN/AlGaN, the activation rate can be further improved after the doping concentration reaches saturation, and the diffusion of Mg atoms can also be effectively suppressed. A high hole concentration of about 1.3 × 1018 cm−3 can be achieved in the p-GaN/AlN-IL/AlGaN structure. |
| Databáze: | OpenAIRE |
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