Radiation tolerant, thin, passive CMOS sensors read out with the RD53A chip
| Autor: | Michael Daas, Fabian Hügging, Norbert Wermes, Jens Janssen, Y. Dieter, Tianyang Wang, David-leon Pohl, Jochen Dingfelder, Pascal Wolf, M. Vogt, Hans Krüger, T. Hemperek |
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| Rok vydání: | 2021 |
| Předmět: |
Nuclear and High Energy Physics
Physics - Instrumentation and Detectors FOS: Physical sciences Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology 7. Clean energy 01 natural sciences Dot pitch law.invention Planar law 0103 physical sciences Hardware_INTEGRATEDCIRCUITS Instrumentation Radiation hardening 010302 applied physics Physics CMOS sensor business.industry Detector Instrumentation and Detectors (physics.ins-det) 021001 nanoscience & nanotechnology Chip CMOS Optoelectronics Resistor 0210 nano-technology business |
| DOI: | 10.48550/arxiv.2105.03959 |
| Popis: | The radiation hardness of passive CMOS pixel sensors fabricated in 150 nm LFoundry technology is investigated. CMOS process lines are especially of interest for large-scale silicon detectors as they offer high production throughput at comparatively low cost. Moreover, several features like poly-silicon resistors, MIM-capacitors and several metal layers are available which can help enhance the sensor design. The performance of a 100 $\mathrm{\mu}$m thin passive CMOS sensor with a pixel pitch of 50 $\mathrm{\mu}$m at different irradiation levels, 5 $\times$ 10$^{15}$n$_{\mathrm{eq}}$cm$^{-2}$ and 1 $\times$ 10$^{16}$n$_{\mathrm{eq}}$cm$^{-2}$, is presented. The sensor was bump-bonded and read out using the RD53A readout chip. After the highest fluence a hit-detection efficiency larger than 99% is measured for minimum ionising particles. The measured equivalent noise charge is comparable to conventional planar pixel sensors. Passive CMOS sensors are thus an attractive option for silicon detectors operating in radiation harsh environments like the upgrades for the LHC experiments. Comment: 18 pages, 10 figures |
| Databáze: | OpenAIRE |
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