Compton recoil electron tracking with silicon strip detectors
| Autor: | Terrence J. O'Neill, F. Ait-Ouamer, O. T. Tumer, I. Schwartz, Allen D. Zych, R. S. White |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Physics
Nuclear and High Energy Physics Silicon Physics::Instrumentation and Detectors business.industry Astrophysics::High Energy Astrophysical Phenomena Compton scattering Gamma ray chemistry.chemical_element Gamma-ray astronomy Electron Particle detector Semiconductor detector Nuclear physics Optics Recoil Nuclear Energy and Engineering chemistry Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Nuclear Science. 39:629-634 |
| ISSN: | 1558-1578 0018-9499 |
| Popis: | The application of silicon strip detectors to Compton gamma-ray astronomy telescopes is described. The silicon Compton recoil telescope tracks Compton recoil electrons in silicon strip converters to provide a unique direction for Compton-scattered gamma rays above 1 MeV. With strip detectors of modest positional and energy resolutions of 1 mm full width at half maximum (FWHM) and 3% at 662 keV, respectively, true imaging can be achieved to provide an order of magnitude improvement in sensitivity to 1.6*10/sup -6/ gamma /cm/sup 2/-s at 2 MeV. The results of extensive Monte Carlo calculations of recoil electrons traversing multiple layers of 200- mu m silicon wafers are presented. Multiple Coulomb scattering of the recoil electron in the silicon wafer of the Compton interaction and the next adjacent wafer is the basic limitation to determining the electron's initial direction. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|