Si growth at graphene surfaces on 6H-SiC(0001) substrates
| Autor: | Tsuyoshi Yamagami, Hiroyuki Hirayama, Junki Sone, Kan Nakatsuji |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Graphene General Engineering General Physics and Astronomy Nanotechnology 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences law.invention law Chemical physics 0103 physical sciences Epitaxial graphene Diffusion (business) 010306 general physics 0210 nano-technology |
| Zdroj: | Japanese Journal of Applied Physics. 55:035502 |
| ISSN: | 1347-4065 0021-4922 |
| Popis: | We studied the growth of Si at the surface of epitaxial graphene on 6H-SiC(0001). Characteristic flower-like islands with a thickness of 2 to 3 nm nucleated during the growth from 290 to 420 K. The islands became featureless in growth at higher temperatures. The growth was predominantly governed by diffusion-limited aggregation. The diffusion energy was evaluated to be 0.21 eV from the temperature-dependent decrease in the density of the islands. |
| Databáze: | OpenAIRE |
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