Preparation and Investigation of p-GaAs/n-Cd1-xZnxS1-yTey Heterojunctions Deposited by Electrochemical Deposition

Autor:	Daniel P. Hashim, Zoltán Kónya, H. M. Mamedov, M. B. Muradov, Vusal U. Mamedov, Krisztian Kordas, Ákos Kukovecz
Rok vydání:	2014
Předmět:	Materials science Aqueous solution Renewable Energy Sustainability and the Environment Analytical chemistry Energy Engineering and Power Technology Heterojunction Electrochemistry law.invention law Solar cell Wafer Thin film Single crystal Deposition (law)
Zdroj:	Journal of Solar Energy Engineering. 136
ISSN:	1528-8986 0199-6231
DOI:	10.1115/1.4027694
Popis:	Anisotype heterojunctions of p-GaAs/n-Cd1-xZnxS1-yTey have been fabricated by preparing n-type Cd1-xZnxS1-yTey thin films onto p-GaAs single crystal wafers using an electrochemical deposition method. The voltammetric behavior of the Cd1-xZnxS1-yTey thin films on GaAs substrates from aqueous solutions was studied. Electrical and photoelectrical properties of heterojunctions were studied depending on the Cd1-xZnxS1-yTey films composition (x = 0.1 ÷ 0.8; y = 0.2; 0.4; 0.9) and heat treatment (HT) regime in argon atmosphere (100–450 °С during 3–16 min). Under AM1.5 conditions, the open-circuit voltage, short-circuit current, fill factor, and efficiency of our best cell, was Voc = 584 mV, Jsc = 14.54 mA/cm2, FF = 0.6, and η = 6.7%, respectively.
Databáze:	OpenAIRE
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