Grazing-incidence X-ray fluorescence analysis of thin chalcogenide materials deposited on Bragg mirrors
| Autor: | D. Eichert, S. Torrengo, Yann Mazel, W. Pessoa, P. Gergaud, Marie-Christine Lépy, Emmanuel Nolot, Mathieu Bernard, Y. Ménesguen |
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| Přispěvatelé: | Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire National Henri Becquerel (LNHB), Département Métrologie Instrumentation & Information (DM2I), Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Département d'instrumentation Numérique (DIN (CEA-LIST)), Elettra Sincrotrone Trieste, EMPIR et EURAMET, Laboratoire d'Intégration des Systèmes et des Technologies (LIST), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Laboratoire d'Intégration des Systèmes et des Technologies (LIST), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay |
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
combined analysis
Grazing-incidence X-ray fluorescence Materials science Silicon Chalcogenide thin film X-ray Reflectometry Bragg mirror X-ray fluorescence chemistry.chemical_element 01 natural sciences Analytical Chemistry chemistry.chemical_compound 0103 physical sciences surface-interface effect Reflectometry Instrumentation Spectroscopy 010302 applied physics phase-change memory [PHYS]Physics [physics] Total internal reflection chemical vapor deposition (CVD) business.industry 010401 analytical chemistry Atomic and Molecular Physics and Optics 0104 chemical sciences X-ray reflectivity Phase-change memory metrology chemistry multilayered substrate Physical vapor deposition SOLEIL Optoelectronics chalcogenides business ionizing radiation depth-profile |
| Zdroj: | Spectrochimica Acta Part B: Atomic Spectroscopy Spectrochimica Acta Part B: Atomic Spectroscopy, 2020, 168, pp.105864. ⟨10.1016/j.sab.2020.105864⟩ Spectrochimica Acta Part B: Atomic Spectroscopy, Elsevier, 2020, 168, pp.105864. ⟨10.1016/j.sab.2020.105864⟩ |
| ISSN: | 0584-8547 1873-3565 |
| DOI: | 10.1016/j.sab.2020.105864⟩ |
| Popis: | International audience; Advanced chalcogenide materials are key for state-of-the art memories, energy harvesting materials and photonics. The properties of thin chalcogenide layers are highly driven by their chemical composition, chemical depth-profiles and surface/interface effects. The combination of Grazing-Incidence X-ray Fluorescence (GIXRF) and X-ray Reflectometry (XRR) techniques allows for non-destructive access to such information, in the lab or at dedicated beamlines. However, the accuracy of the GIXRF-deduced composition slightly degrades with depth, as the enhancement of the XRF signal by the X-ray Standing Wave (XSW) field is usually limited to the first nanometers at the surface of the probed sample. In this paper, we suggest the use of (Mo/Si)*N Bragg mirrors, rather than bare silicon substrates for thin chalcogenide deposition, to improve the sensitivity of GIXRF/XRR analysis to small process-driven modifications. The aim of such multilayered substrates is to maintain high values of X-ray reflected intensity even at angles significantly higher than the critical angle, therefore generating an XSW-induced enhancement of the XRF signal not only at the surface but also in the depth of the layer of interest. The simulation of GIXRF-XRR data, collected at SOLEIL Metrology beamline and in the lab on Rigaku SmartLab diffractometer, on arsenic-free Ovonic Threshold Switch materials (Ge, Se, Sb) for advanced Phase Change memory (PCRAM) applications illustrates the interest of this approach, which is fully-compatible with numbers of PCRAM materials elaborated with low-temperature physical vapor deposition process. |
| Databáze: | OpenAIRE |
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