Gate-Induced Thermally Stimulated Current on the Ferroelectric-like Dielectric Properties of (BEDT-TTF)(TCNQ) Crystalline Field Effect Transistor
| Autor: | Hiroshi Yamauchi, Masatoshi Sakai, Kazuhiro Kudo, Shigekazu Kuniyoshi, Masakazu Nakamura, Mitsutoshi Hanada |
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| Rok vydání: | 2012 |
| Předmět: |
Phase transition
Materials science ferroelectricity pyroelectric current field effect transistor Mott insulator charge order Condensed matter physics General Chemical Engineering Dielectric Condensed Matter Physics Ferroelectricity Pyroelectricity Inorganic Chemistry Phase (matter) lcsh:QD901-999 General Materials Science Field-effect transistor lcsh:Crystallography Polarization (electrochemistry) |
| Zdroj: | Crystals; Volume 2; Issue 3; Pages: 730-740 Crystals, Vol 2, Iss 3, Pp 730-740 (2012) |
| ISSN: | 2073-4352 |
| DOI: | 10.3390/cryst2030730 |
| Popis: | A gate-induced thermally stimulated current (TSC) on β′-(BEDT-TTF)(TCNQ) crystalline FET were conducted to elucidate the previously observed ferroelectric-like behaviors. TSC which is symmetric for the polarization of an applied VPG and has a peak at around 285 K was assigned as a pyroelectric current. By integrating the pyroelectric current, temperature dependence of the remnant polarization charge was obtained and the existence of the ferroelectric phase transition at 285 K was clearly demonstrated. We have tentatively concluded that the phase transition between dimer Mott insulator and charge ordered phase occurred at around the interface of organic crystal and substrate. |
| Databáze: | OpenAIRE |
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