Composition Analysis by STEM-EDX of Ternary Semiconductors by Internal References

Autor:	Julie S. Nilsen, Antonius T. J. van Helvoort
Rok vydání:	2021
Předmět:	Materials science Ternary semiconductors Chemical engineering Composition analysis Instrumentation
Zdroj:	Microscopy and Microanalysis
ISSN:	1435-8115 1431-9276
DOI:	10.1017/s1431927621013672
Popis:	A practical method to determine the composition within ternary heterostructured semiconductor compounds using energy-dispersive X-ray spectroscopy in scanning transmission electron microscopy is presented. The method requires minimal external input factors such as user-determined or calculated sensitivity factors by incorporating a known compositional relationship, here a fixed stoichiometric ratio in III–V compound semiconductors. The method is demonstrated for three different systems; AlGaAs/GaAs, GaAsSb/GaAs, and InGaN/GaN with three different specimen geometries and compared to conventional quantification approaches. The method incorporates absorption effects influencing the composition analysis without the need to know the thickness of the specimen. Large variations in absorption conditions and assumptions regarding the reference area limit the accuracy of the developed method.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::71b755d4d89df8636f1117ea23d78e83 https://doi.org/10.1017/s1431927621013672 Zobrazit plný text záznamu