Minimum Power Input Control for Class-E Amplifier Using Depletion-Mode Gallium Nitride High Electron Mobility Transistor
| Autor: | Wei-Hua Chieng, You Chen Weng, Chih Chiang Wu, Edward Yi Chang |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
Technology
Control and Optimization Materials science 020209 energy wireless power transfer Energy Engineering and Power Technology Gallium nitride 02 engineering and technology High-electron-mobility transistor chemistry.chemical_compound 0202 electrical engineering electronic engineering information engineering Maximum power transfer theorem Wireless power transfer D-mode gate drive Electrical and Electronic Engineering Engineering (miscellaneous) Diode class-E amplifier minimum power input control GaN HEMT Renewable Energy Sustainability and the Environment business.industry Amplifier 020208 electrical & electronic engineering Power (physics) chemistry Optoelectronics business Energy (miscellaneous) Voltage |
| Zdroj: | Energies, Vol 14, Iss 2302, p 2302 (2021) Energies; Volume 14; Issue 8; Pages: 2302 |
| ISSN: | 1996-1073 |
| Popis: | In this study, we implemented a depletion (D)-mode gallium nitride high electron mobility transistor (GaN HEMT, which has the advantage of having no body diode) in a class-E amplifier. Instead of applying a zero voltage switching control, which requires high frequency sampling at a high voltage (>600 V), we developed an innovative control method called the minimum power input control. The output of this minimum power input control can be presented in simple empirical equations allowing the optimal power transfer efficiency for 6.78 MHz resonant wireless power transfer (WPT). In order to reduce the switching loss, a gate drive design for the D-mode GaN HEMT, which is highly influential for the reliability of the resonant WPT, was also produced and described here for circuit designers. |
| Databáze: | OpenAIRE |
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