Hyperfine interactions in the cubic semiconductor CdO

Autor:	Mario Rentería, A. G. Bibiloni, Judith Desimoni, C. P. Massolo
Rok vydání:	1990
Předmět:	chemistry.chemical_compound Materials science Condensed matter physics chemistry Electron capture Band gap Cadmium oxide Crystal structure Atmospheric temperature range Electronic band structure Molecular physics Hyperfine structure Electric field gradient
Zdroj:	Physical Review B. 41:1443-1446
ISSN:	1095-3795 0163-1829
DOI:	10.1103/physrevb.41.1443
Popis:	The time-differential perturbed angular correlation technique has been applied using {sup 111}In probes, which decay through electron capture to {sup 111}Cd, to study the hyperfine interaction in cubic cadmium oxide, in the temperature range RT--740 {degree}C (RT denotes room temperature). The main fraction of probes are located in perfect-lattice sites, with null electric field gradient in agreement with crystalline-structure considerations. Around 25% of the total intensity shows an electric-field-gradient distribution around {ital V}{sub {ital zz}}=0. This corresponds to probes located in sites perturbed by the vicinity of oxygen vacancies in the lattice. The temperature-independent behavior of the measured hyperfine parameters is discussed in terms of conductivity and band-structure properties of the semiconductor. No time-dependent interaction arising from nuclear electron-capture aftereffects are seen in this experiment. This is in agreement with a previously reported model of aftereffect processes which states that only holes trapped in impurity levels inside the band gap of the semiconductor can give rise to detectable fluctuating interactions.
Databáze:	OpenAIRE
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