RF Power Performance Evaluation of Surface Channel Diamond MESFET
| Autor: | Gennaro Conte, D. Dominijanni, E. Giovine, Ernesto Limiti, Paolo Calvani, B Pasciuto, Giovanni Ghione, Vittorio Camarchia, Maria Cristina Rossi, Federica Cappelluti |
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| Přispěvatelé: | Camarchia, V., Cappelluti, F., Ghione, G., Rossi, M. C., Calvani, P., Conte, G., Pasciuto, Benedetto, Limiti, Emanuela, Dominijanni, Donatella, Giovine, E. |
| Rok vydání: | 2010 |
| Předmět: |
Power gain
Power-added efficiency Materials science business.industry RF power amplifier Settore ING-INF/01 Diamond engineering.material Power (physics) Threshold voltage engineering Optoelectronics MESFET business Polycrystalline diamond Field effect transistor (FET) RF power Load-pull Hydrogen terminated Power density |
| Zdroj: | 1203 (2010). info:cnr-pdr/source/autori:M.C. Rossi, P. Calvani, G. Conte, V. Camarchia, F. Cappelluti, G. Ghione, B. Pasciuto, E. Limiti, D. Dominijanni, E. Giovine/titolo:RF Power Performance Evaluation of Surface Channel Diamond MESFET/doi:/rivista:/anno:2010/pagina_da:/pagina_a:/intervallo_pagine:/volume:1203 |
| Popis: | We experimentally investigate the large-signal radio frequency performances of surface-channel p-type diamond MESFETs fabricated on hydrogenated polycrystalline diamond. The devices under examination have a coplanar layout with two gate fingers, total gate periphery of 100 lm; in DC they exhibit a hole accumulation behavior with threshold voltage V t 0–0.5 V and maximum drain current density of 120 mA/mm. The best small-signal radio frequency performances (maximum cutoff or transition fre- quency f T and oscillation frequency f max ) were obtained close to the threshold and were of the order of 6 and 15 GHz, respectively. The power radio frequency response was characterized by driving the devices in class A at an operating frequency of 2 GHz and identifying through the active load-pull technique the optimum load for maximum power added efficiency. A power gain in linearity of 8 dB and an output power of approximately 0.2 W/mm with 22% power added efficiency were obtained on the optimum load impedance at a bias point V DS = 14 V, V GS = 1 V. To the best of our knowledge, these are the first large signal measurements ever reported for surface MESFET on polycrystalline diamond, and show the poten- tial of such technology for the development of microwave power devices. |
| Databáze: | OpenAIRE |
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