Mechanism of twin-reduced III-V epitaxy on As-modified vicinal Si(111)
| Autor: | Erich Runge, Daniel Abou-Ras, Christian Koppka, Thomas Hannappel, Lars Winterfeld, Oliver Supplie, Peter Kleinschmidt |
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| Rok vydání: | 2018 |
| Předmět: |
Methods and concepts for material development
010302 applied physics Materials science Physics and Astronomy (miscellaneous) business.industry Nucleation Substrate surface 02 engineering and technology 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences Molecular physics Semiconductor 0103 physical sciences Step edges General Materials Science Density functional theory 0210 nano-technology business Vicinal |
| Zdroj: | Physical Review Materials. 2 |
| ISSN: | 2475-9953 |
| Popis: | Based on density functional theory calculations, the authors develop a general model for nucleation of III-V semiconductors on vicinal nonpolar (111)-oriented substrates. This model predicts, in particular, that the atomic structure of the step edges at the substrate surface is decisive for the formation and suppression of detrimental rotational twin defects. These predictions are in full agreement with the experimental analysis done on a series of samples with the technologically important material combination of GaP grown on As-modified Si(111). The authors thus derive a complete picture of the formation and suppression of rotational twins relevant for low-defect III-V-on-Si integration. |
| Databáze: | OpenAIRE |
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