Enhanced image sensing with avalanche multiplication in hybrid structure of crystalline selenium photoconversion layer and CMOSFETs
| Autor: | Toshiki Arai, Toshihisa Watabe, Misao Kubota, Yuki Honda, Kazunori Miyakawa, Mutsumi Sugiyama, Masakazu Nanba, Shigeyuki Imura, Keitada Mineo, Keisuke Nishimoto |
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| Rok vydání: | 2020 |
| Předmět: |
Materials for devices
Materials science Science 02 engineering and technology 01 natural sciences Noise (electronics) Article law.invention law Electric field 0103 physical sciences Image sensor 010302 applied physics Multidisciplinary Pixel business.industry Transistor 021001 nanoscience & nanotechnology CMOS Medicine Optoelectronics 0210 nano-technology business Voltage Dark current |
| Zdroj: | Scientific Reports Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020) |
| ISSN: | 2045-2322 |
| DOI: | 10.1038/s41598-020-78837-7 |
| Popis: | The recent improvements of complementary metal–oxide–semiconductor (CMOS) image sensors are playing an essential role in emerging high-definition video cameras, which provide viewers with a stronger sensation of reality. However, the devices suffer from decreasing sensitivity due to the shrinkage of pixels. We herein address this problem by introducing a hybrid structure comprising crystalline-selenium (c-Se)-based photoconversion layers and 8 K resolution (7472 × 4320 pixels) CMOS field-effect transistors (FETs) to amplify signals using the avalanche multiplication of photogenerated carriers. Using low-defect-level NiO as an electric field buffer and an electron blocking layer, we confirmed signal amplification by a factor of approximately 1.4 while the dark current remained low at 2.6 nA/cm2 at a reverse bias voltage of 22.6 V. Furthermore, we successfully obtained a brighter image based on the amplified signals without any notable noise degradation. |
| Databáze: | OpenAIRE |
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