Process modeling and design procedure for IGFET thresholds
| Autor: | A.G. Fortino, H.J. Geipel |
|---|---|
| Rok vydání: | 1979 |
| Předmět: |
Process modeling
Computer science Process (computing) Process design Electronic Optical and Magnetic Materials Peak concentration Consistency (statistics) Control theory Hardware_INTEGRATEDCIRCUITS Electronic engineering Field-effect transistor Electrical and Electronic Engineering Network synthesis filters Simulation Energy (signal processing) |
| Zdroj: | IEEE Journal of Solid-State Circuits. 14:430-435 |
| ISSN: | 0018-9200 |
| DOI: | 10.1109/jssc.1979.1051194 |
| Popis: | An empirically based process modeling system is discussed for determining ion-implant conditions used to achieve specific IGFET thresholds. Experimental techniques are applied to insure consistency between physical process phenomenon and the numerical algorithms employed. Device threshold design results are presented for active and parasitic IGFET's in a dual polysilicon-gate technology. The utility of this design procedure in multistep processes for determining the effects of various parameters such as screen thickness, final peak concentration, dose, and energy are considered. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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