Electroluminescence efficiency of InGaN light emitting diodes: dependence on AlGaN:Mg electron blocking layer width and Mg doping profile

Autor:	T. Stephan, Michael Kunzer, Klaus Köhler, P. Schlotter, Joachim Wagner
Přispěvatelé:	Publica
Rok vydání:	2003
Předmět:	Photoluminescence Materials science business.industry diffusion Doping Electroluminescence light emitting diode law.invention Wavelength Leuchtdiode law Optoelectronics (AlGaIn)N business Luminescence Quantum well Doping profile Light-emitting diode
Zdroj:	physica status solidi (c). :2198-2201
ISSN:	1610-1634
DOI:	10.1002/pssc.200303439
Popis:	The influence of the Mg doping profile on the luminescence performance of InGaN light emitting diodes with an emission wavelength of 395 nm has been investigated. An increased spread of the Mg doping atoms towards the InGaN quantum well active region results in thermal quenching of the photoluminescence and electroluminescence intensity, and thus in a lower output power at 20 mA of the devices at room temperature. Further, the output power-versus current characteristics become increasingly superlinear, indicating that Mg introduces nonradiative recombination centers in the InGaN quantum well active region. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70bf32e77707bd597632778614d07425 https://doi.org/10.1002/pssc.200303439 Zobrazit plný text záznamu Plný text