Hemispherical thin-film transistor passive pixel sensors
| Autor: | Marko Stumpf, Uwe D. Zeitner, Daniela Radtke, Tze Ching Fung, Jerzy Kanicki, Geonwook Yoo |
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| Přispěvatelé: | Publica |
| Rok vydání: | 2010 |
| Předmět: |
non-planar surface
Materials science Pixel business.industry Dynamic range Transistor Metals and Alloys thin-film transistor Condensed Matter Physics Dot pitch Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Optics Thin-film transistor law Optoelectronics Electrical and Electronic Engineering Image sensor Image sensor circuit business Instrumentation Lithography Electronic circuit |
| Zdroj: | Sensors and Actuators A: Physical. 158:280-283 |
| ISSN: | 0924-4247 |
| DOI: | 10.1016/j.sna.2009.11.019 |
| Popis: | Hemispherical image sensors are very promising technology for cameras, surveillance systems and artificial vision. We report on the electrical performance of the hydrogenated amorphous silicon thin-film transistor passive pixel image sensor (PPS) circuits fabricated on a hemispherical substrate using maskless laser-write lithography (LWL). The level-to-level registration and alignment over the curved surface with a high accuracy are demonstrated for the LWL in this work. The obtained results clearly show that it is possible to realize active-matrix PPS with a 150 mu m pixel pitch and a dynamic range of about 40 dB that is suitable for hemispherical image sensors. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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